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| inchange semiconductor isc product specification isc silicon pnp power transistor BD908 isc website www.iscsemi.cn description dc current gain - : h fe = 40@ i c = - 0.5a collector-emitter sustaining voltage- : v ceo(sus) = -60v(min) complement to type bd907 applications designed for use in general purpose power amplifier and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current-continuous -15 a i cm collector current-peak -20 a i b b base current -5 a p c collector power dissipation @ t c =25 90 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.38 /w
inchange semiconductor isc product specification isc silicon pnp power transistor BD908 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = -50ma; i b = 0 -60 v v ce( sat )-1 collector-emitter saturation voltage i c = -5a; i b = -0.5a b -1.0 v v ce( sat )-2 collector-emitter saturation voltage i c = -10a; i b = -2.5a -3.0 v v be( sat ) base-emitter saturation voltage i c = -10a; i b = -2.5a -2.5 v v be( on ) base-emitter on voltage i c = -5a ; v ce = -4v -1.5 v i cbo collector cutoff current v cb = -60v; i e = 0 -0.5 ma i ceo collector cutoff current v ce = -30v; i b = 0 b -1.0 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -1.0 ma h fe-1 dc current gain i c = -0.5a; v ce = -4v 40 250 h fe-2 dc current gain i c = -5a; v ce = -4v 15 150 h fe-3 dc current gain i c = -10a ; v ce = -4v 5 f t current-gain?bandwidth product i c = -0.5a; v ce = -4v; f test = 1.0mhz 3.0 mhz isc website www.iscsemi.cn 2 |
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